4 Physical characteristics

11.113GPPRelease 1999Specification of the Subscriber Identity Module - Mobile Equipment (SIM-ME) InterfaceTS

Two physical types of SIM are specified. These are the "ID‑1 SIM" and the "Plug‑in SIM".

The physical characteristics of both types of SIM shall be in accordance with ISO/IEC 7816‑1,2 [24, 25] unless otherwise specified. The following additional requirements shall be applied to ensure proper operation in the GSM environment.

4.1 Format and layout

The information on the exterior of either SIM should include at least the individual account identifier and the check digit of the IC Card Identification (see clause 10, EFICCID).

4.1.1 ID‑1 SIM

Format and layout of the ID‑1 SIM shall be in accordance with ISO/IEC 7816‑1,2 [24, 25].

The card shall have a polarization mark (see TS 02.07 [3]) which indicates how the user should insert the card into the ME.

The ME shall accept embossed ID‑1 cards. The embossing shall be in accordance with ISO/IEC 7811 [22]. The contacts of the ID‑1 SIM shall be located on the front (embossed face, see ISO/IEC 7810 [21]) of the card.

NOTE: Card warpage and tolerances are now specified for embossed cards in ISO/IEC 7810 [21].

4.1.2 Plug‑in SIM

The Plug‑in SIM has a width of 25 mm, a height of 15 mm, a thickness the same as an ID‑1 SIM and a feature for orientation. See figure A.1 in normative annex A for details of the dimensions of the card and the dimensions and location of the contacts.

Annexes A.1 and A.2 of ISO 7816‑1 [24] do not apply to the Plug‑in SIM.

Annex A of ISO/IEC 7816‑2 [25] applies with the location of the reference points adapted to the smaller size. The three reference points P1, P2 and P3 measure 7,5 mm, 3,3 mm and 20,8 mm, respectively, from 0. The values in table A.1 of ISO 7816‑2 [25] are replaced by the corresponding values of figure A.1.

4.2 Temperature range for card operation

The temperature range for full operational use shall be between ‑25°C and +70°C with occasional peaks of up to +85°C. "Occasional" means not more than 4 hours each time and not over 100 times during the life time of the card.

4.3 Contacts

4.3.1 Provision of contacts

ME: Contacting elements in the ME in positions C4 and C8 are optional, and are not used in the GSM application. They shall present a high impedance to the SIM card in the GSM application. If it is determined that the SIM is a multi‑application ICC, then these contacts may be used. Contact C6 need not be provided for Plug‑in SIMs.

SIM: Contacts C4 and C8 need not be provided by the SIM, but if they are provided, then they shall not be connected internally in the SIM if the SIM only contains the GSM application. Contact C6 shall not be bonded in the SIM for any function other than supplying Vpp.

4.3.2 Activation and deactivation

The ME shall connect, activate and deactivate the SIM in accordance with the Operating Procedures specified in ISO/IEC 7816‑3 [26].

For any voltage level, monitored during the activation sequence, or during the deactivation sequence following soft power‑down, the order of the contact activation/deactivation shall be respected.

NOTE 1: Soft Power switching is defined in TS 02.07 [3].

NOTE 2: It is recommended that whenever possible the deactivation sequence defined in ISO/IEC 7816‑3 [26] should be followed by the ME on all occasions when the ME is powered down.

If the SIM clock is already stopped and is not restarted, the ME is allowed to deactivate all the contacts in any order, provided that all signals reach low level before Vcc leaves high level. If the SIM clock is already stopped and is restarted before the deactivation sequence, then the deactivation sequence specified in ISO/IEC 7816‑3 [26] subclause 5.4 shall be followed.

When Vpp is connected to Vcc, as allowed by GSM (see clause 5), then Vpp will be activated and deactivated with Vcc, at the time of the Vcc activation/deactivation, as given in the sequences of ISO/IEC 7816‑3 [26] subclauses 5.2 and 5.4.

Vcc is powered when it has a value between 4,5 V and 5,5 V.

4.3.3 Inactive contacts

The voltages on contacts C1, C2, C3, C6 and C7 of the ME shall be between 0 and ± 0,4 volts referenced to ground (C5) when the ME is switched off with the power source connected to the ME. The measurement equipment shall have a resistance of 50 kohms when measuring the voltage on C2, C3, C6 and C7. The resistance shall be 10 kohms when measuring the voltage on C1.

4.3.4 Contact pressure

The contact pressure shall be large enough to ensure reliable and continuous contact (e.g. to overcome oxidisation and to prevent interruption caused by vibration). The radius of any curvature of the contacting elements shall be greater than or equal to 0,8 mm over the contact area.

Under no circumstances may a contact force be greater than 0,5 N per contact.

Care shall be taken to avoid undue point pressure to the area of the SIM opposite to the contact area. Otherwise this may damage the components within the SIM.

4.4 Precedence

See TS 02.17 [6] for precedence.

4.5 Static Protection

Considering that the SIM is a CMOS device, the ME manufacturer shall take adequate precautions (in addition to the protection diodes inherent in the SIM) to safeguard the ME, SIM and SIM/ME interface from static discharges at all times, and particularly during SIM insertion into the ME.